Interesting Engineering on MSN
1,112°F: New silicon carbide transistor could be used for electronics in extreme heat
Researchers at Kyoto University have developed a silicon carbide (SiC) transistor designed to operate ...
Inside there's a coil of wire wrapped around an iron core. When a current flows through this control wire, it creates a ...
Tech Xplore on MSN
A silicon carbide transistor that operates at 600°C
For more than two decades, silicon carbide (SiC) has been promoted as the key to developing extreme-environment electronics.
On Dec. 16, 1947, the future began with the invention of the transistor. A lab notebook indicates that researchers at Bell Telephone Laboratories first got the thing to work on this day 75 years ago.
Add Yahoo as a preferred source to see more of our stories on Google. John Bardeen, Walter Brattain and William Shockley had submitted the patent application for a "three-electrode circuit element ...
The future began 75 years ago this week with the invention of something small that’s considered the most manufactured item in human history. Odds are, you are surrounded by them right now. The ...
Conventional silicon-based electronics are rapidly approaching a fundamental barrier. Below about five nanometers, quantum effects make their behavior unpredictable. That’s led to research into ...
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